FDPF12N50UT Fairchild Semiconductor, FDPF12N50UT Datasheet - Page 4

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FDPF12N50UT

Manufacturer Part Number
FDPF12N50UT
Description
MOSFET N-CH 500V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FDPF12N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1395pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF12N50UT
Manufacturer:
KEC
Quantity:
9 122
Part Number:
FDPF12N50UT
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDPF12N50UT
Manufacturer:
FSC
Quantity:
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FDP12N50U / FDPF12N50UT Rev.
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
12
10
-100
8
6
4
2
0
25
-50
vs. Temperature
T
50
T
J
vs. Case Temperature - FDPF12N50UT
, Junction Temperature
C
, Case Temperature
0
1E-3
0.01
0.1
75
1
5
10
Figure 10. Transient Thermal Response Curve - FDPF12N50UT
0.05
50
0.5
0.1
0.02
Single pulse
0.2
0.01
-5
100
100
10
[
o
*Notes:
-4
C
1. V
2. I
[
]
o
C
125
D
150
]
GS
= 250
= 0V
10
µ
A
-3
Rectangular Pulse Duration [sec]
200
150
(Continued)
10
-2
4
0.01
10
0.1
10
80
-1
Figure 8. Maximum Safe Operating Area
1
1
Operation in This Area
is Limited by R
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
10
θ
JM
0
JC
V
DS
(t) = 3.0
- T
- FDPF12N50UT
, Drain-Source Voltage [V]
C
t
DS(on)
1
= P
10
t
2
o
DM
10
*Notes:
C/W Max.
1. T
2. T
3. Single Pulse
1
* Z
1
θ
/t
C
J
JC
2
= 150
= 25
(t)
o
10
C
o
C
100
2
10ms
100
DC
1ms
µ
s
20
www.fairchildsemi.com
µ
s
800

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