FDPF10N60ZUT Fairchild Semiconductor, FDPF10N60ZUT Datasheet - Page 3

• Manufacturer Part Number: FDPF10N60ZUT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N60ZUT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1980pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 42 W
• Forward Transconductance Gfs (max / Min): 12.5 S
• Gate Charge Qg: 31 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60ZU/FDPF10N60ZUT Rev. A
Typical Performance Characteristics
3000
2500
2000
1500
1000
500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
20
10
Figure 1. On-Region Characteristics
1
0
0.1
1
0
V
GS
=
5
V
10.0 V
V
Drain Current and Gate Voltage
DS
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
DS
C
C
C
, Drain-Source Voltage [V]
rss
iss
oss
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
10
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
1
V
GS
= 10V
15
*Notes:
1. 250
2. T
* Note : T
V
C
GS
20
= 25
μ
s Pulse Test
= 20V
* Note:
o
10
C
1. V
2. f = 1MHz
J
10
= 25
25
GS
= 0V
o
C
20
30
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
10
10
30
20
10
8
6
4
2
0
1
1
0.0
0
3
Variation vs. Source Current
and Temperature
V
SD
Q
, Body Diode Forward Voltage [V]
4
V
0.5
10
g
V
V
V
, Total Gate Charge [nC]
GS
DS
DS
DS
,Gate-Source Voltage[V]
= 150V
= 380V
= 400V
150
5
o
C
1.0
20
* Notes :
1. V
2. 250
Notes:
1. V
2. 250
6
25
* Note : I
DS
o
GS
C
150
25
μ
μ
= 20V
s Pulse Test
= 0V
s Pulse Test
o
1.5
30
o
C
C
www.fairchildsemi.com
D
7
= 10A
2.0
40
8