FDPF12N60NZ Fairchild Semiconductor, FDPF12N60NZ Datasheet - Page 4

• Manufacturer Part Number: FDPF12N60NZ
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF12N60NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1676pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N60NZ / FDPF12N60NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 11. Maximum Drain Current vs Case Temperature
Figure 9. Maximum Safe Operating Area
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
1
15
12
-80
9
6
3
0
1
25
Operation in This Area
is Limited by R
-40
vs. Temperature
-FDPF12N60NZ
T
50
J
V
T
, Junction Temperature
DS
C
, Case Temperature
, Drain-Source Voltage [V]
0
10
DS(on)
* Notes :
1. T
2. T
3. Single Pulse
75
40
C
J
= 150
= 25
o
DC
100
o
C
C
80
100
10ms
* Notes :
[
1ms
o
1. V
2. I
[
C
100
o
]
C
D
GS
120
125
]
= 250uA

s
= 0V
30

s
160
1000
150
(Continued)
4
Figure 10. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
0.01
100
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0
-80
1
Operation in This Area
is Limited by R
-40
-FDP12N60NZ
vs Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
0
DS(on)
* Notes :
1. T
2. T
3. Single Pulse
C
J
40
= 150
= 25
o
o
C
C
DC
100
80
10ms
* Notes :
1ms
1. V
2. I
[
100
o
C
D
GS
120
]

= 6A
s
www.fairchildsemi.com
= 10V
10

1000
160
s