FDPF16N50UT Fairchild Semiconductor, FDPF16N50UT Datasheet

MOSFET N-CH 500V 15A TO-220F-3

FDPF16N50UT

Manufacturer Part Number
FDPF16N50UT
Description
MOSFET N-CH 500V 15A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF16N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.37 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
15 A
Power Dissipation
38.5 W
Forward Transconductance Gfs (max / Min)
23 S
Gate Charge Qg
32 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. A1
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP16N50U / FDPF16N50UT
N-Channel MOSFET, FRFET
500V, 15A, 0.48
Features
• R
• Low gate charge ( Typ. 32nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.37 ( Typ.)@ V
( Typ. 20pF)
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
D
S
TO-220
FDP Series
GS
= 10V, I
D
= 7.5A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
o
C)
D
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
FDPF Series
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP16N50U
FDP16N50U
1.59
0.63
62.5
200
G
0.5
15
60
9
-55 to +150
500
±30
610
300
15
20
20
FDPF16N50UT Units
FDPF16N50UT Units
S
UniFET
62.5
38.5
D
15*
60*
3.3
0.3
October 2009
9*
-
www.fairchildsemi.com
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

Related parts for FDPF16N50UT

FDPF16N50UT Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient CS R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FDP16N50U / FDPF16N50UT Rev. A1 Description = 7.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting 16A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP16N50U / FDPF16N50UT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

Page 3

... Drain Current and Gate Voltage 0.6 0 10V GS 0.4 0.3 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss 2000 C iss 1000 C rss Drain-Source Voltage [V] DS FDP16N50U / FDPF16N50UT Rev. Figure 2. Transfer Characteristics Notes :  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : 0.2 Figure 6 ...

Page 4

... Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Tem perature [ J Figure 9. Maximum Drain Current vs. Case Temperature - FDPF16N50UT Case Temperature [ C Figure 10. Transient Thermal Response Curve - FDPF16N50UT FDP16N50U / FDPF16N50UT Rev. (Continued) Figure 8. Maximum Safe Operating Area Notes : -  250 ...

Page 5

... FDP16N50U / FDPF16N50UT Rev. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP16N50U / FDPF16N50UT Rev. Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 ø3.60 1.27 ±0.10 2.54TYP ±0.20 [2.54 ] 10.00 FDP16N50U / FDPF16N50UT Rev. TO-220 ±0.20 (8.70) ±0.10 1.52 ±0.10 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : AC2500V FDP16N50U / FDPF16N50UT Rev. TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP16N50U / FDPF16N50UT Rev. FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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