BF998,235 NXP Semiconductors, BF998,235 Datasheet - Page 9
![MOSFET N-CH 12V 30MA SOT143](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF998,235
Manufacturer Part Number
BF998,235
Description
MOSFET N-CH 12V 30MA SOT143
Manufacturer
NXP Semiconductors
Datasheet
1.BF998215.pdf
(15 pages)
Specifications of BF998,235
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
DD
= 12 V; G
S
50 Ω
input
= 3.3 mS; G
100 kΩ
1 nF
L
= 1 mS.
V DD
L1
140 kΩ
1 nF
C1
2 to 18 pF
L2
Fig.18 Gain control test circuit at f = 800 MHz.
1 nF
1 nF
C2
0.5 to 3.5 pF
V agc
270 kΩ
1.8 kΩ
V DD
9
360 Ω
1 nF
C3
0.5 to
3.5 pF
L3
V DD
L4
C4
4 to 40 pF
1 nF
1 nF
BF998; BF998R
Product specification
MGE801
50 Ω
output