BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 14

• Manufacturer Part Number: BF1205,135
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,135

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 35dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
(4) V
V
Fig.20 Gate 1 current as a function of gate 1
DS
(μA)
I G1
(b) = 5 V; V
60
40
20
G2-S
G2-S
G2-S
G2-S
0
0
voltage; typical values; amplifier b.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
DS
0.4
(a) = V
G1-S
0.8
(a) = 0 V; T
(5) V
(6) V
(7) V
1.2
(2)
(1)
G2-S
G2-S
G2-S
j
= 25 C.
V G1-S (V)
= 2 V.
= 1.5 V.
= 1 V.
(4)
1.6
(3)
MGX447
(5)
(6)
(7)
2
14
handbook, halfpage
(1) V
(2) V
(3) V
V
Fig.21 Forward transfer admittance as a function
DS
(mS)
y fs
(b) = 5 V; V
40
30
20
10
G2-S
G2-S
G2-S
0
0
of drain current; typical values; amplifier b.
= 4 V.
= 3.5 V.
= 3 V.
DS
4
(a) = V
G1-S
8
(a) = 0 V; T
(4) V
(5) V
12
G2-S
G2-S
j
= 25 C.
Product specification
= 2.5 V.
= 2 V.
(1)
16
(2)
I D (mA)
BF1205
MGX448
(3)
(4)
(5)
20