BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 17
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BF1205,135
Manufacturer Part Number
BF1205,135
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,135
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
35dB
Voltage - Rated
10V
Current Rating
30mA
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
V
R
Fig.26 Gate 1 current as a function of gate 2
DS
G1
(μA)
I G1
(b) = 5 V; V
(b) = 150 k (connected to V
30
20
10
GG
GG
GG
0
0
= 5.0 V.
= 4.5 V.
= 4.0 V.
voltage; typical values; amplifier b.
DS
(a) = V
2
G1-S
(a) = 0 V; T
(4) V
(5) V
GG
); see Fig.4.
GG
GG
= 3.5 V.
= 3.0 V.
j
4
= 25 C;
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
MGX453
6
17
handbook, halfpage
Fig.27 Unwanted voltage for 1% cross-modulation
V
R
f
unw
(dBμV)
V unw
DS
G1
(b) = 5 V; V
= 60 MHz; T
(b) = 150 k (connected to V
120
110
100
90
80
0
as a function of gain reduction; typical values;
amplifier b.
GG
amb
= 5 V; V
= 25 C; see Fig.30.
20
DS
(a) = V
GG
); f
G1-S
w
= 50 MHz;
(a) = 0 V;
gain reduction (dB)
40
Product specification
BF1205
MGX454
60