BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 15

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
Fig.22 Drain current as a function of gate 1 current;
DS
(mA)
I D
(b) = 5 V; V
20
16
12
8
4
0
0
typical values; amplifier b.
G2-S
10
= 4 V; V
20
DS
(a) = V
30
G1-S
(a) = 0 V; T
40
I G1 (μA)
MGX449
j
= 25 C.
50
15
handbook, halfpage
V
T
Fig.23 Drain current as a function of gate 1 supply
DS
j
(mA)
= 25 C; R
I D
(b) = 5 V; V
16
12
8
4
0
0
voltage (V
G1
(b) = 150 k (connected to V
G2-S
1
= 4 V; V
GG
); typical values; amplifier b.
2
DS
(a) = V
G1-S
3
(a) = 0 V;
Product specification
GG
); see Fig.4.
4
V GG (V)
BF1205
MGX450
5