BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 15
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
Fig.22 Drain current as a function of gate 1 current;
DS
(mA)
I D
(b) = 5 V; V
20
16
12
8
4
0
0
typical values; amplifier b.
G2-S
10
= 4 V; V
20
DS
(a) = V
30
G1-S
(a) = 0 V; T
40
I G1 (μA)
MGX449
j
= 25 C.
50
15
handbook, halfpage
V
T
Fig.23 Drain current as a function of gate 1 supply
DS
j
(mA)
= 25 C; R
I D
(b) = 5 V; V
16
12
8
4
0
0
voltage (V
G1
(b) = 150 k (connected to V
G2-S
1
= 4 V; V
GG
); typical values; amplifier b.
2
DS
(a) = V
G1-S
3
(a) = 0 V;
Product specification
GG
); see Fig.4.
4
V GG (V)
BF1205
MGX450
5