BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 17

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
V
R
Fig.26 Gate 1 current as a function of gate 2
DS
G1
(μA)
I G1
(b) = 5 V; V
(b) = 150 k (connected to V
30
20
10
GG
GG
GG
0
0
= 5.0 V.
= 4.5 V.
= 4.0 V.
voltage; typical values; amplifier b.
DS
(a) = V
2
G1-S
(a) = 0 V; T
(4) V
(5) V
GG
); see Fig.4.
GG
GG
= 3.5 V.
= 3.0 V.
j
4
= 25 C;
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
MGX453
6
17
handbook, halfpage
Fig.27 Unwanted voltage for 1% cross-modulation
V
R
f
unw
(dBμV)
V unw
DS
G1
(b) = 5 V; V
= 60 MHz; T
(b) = 150 k (connected to V
120
110
100
90
80
0
as a function of gain reduction; typical values;
amplifier b.
GG
amb
= 5 V; V
= 25 C; see Fig.30.
20
DS
(a) = V
GG
); f
G1-S
w
= 50 MHz;
(a) = 0 V;
gain reduction (dB)
40
Product specification
BF1205
MGX454
60