BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 19

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, full pagewidth
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
I
Fig.31 Input admittance as a function of frequency;
D
DS
(mS)
(b)= 12 mA.
10 −
y is
10
(b) = 5 V; V
10
1
2
1
10
typical values; amplifier b.
G2-S
= 4 V; V
DS
(a) = V
10
2
R GEN
50 Ω
b is
g is
G1-S
V i
Fig.30 Cross-modulation test set-up for amplifier b.
(a) = 0 V;
f (MHz)
50 Ω
MGX457
50 Ω
4.7 nF
4.7 nF
4.7 nF
10
V AGC
V GG
3
5 V
10 kΩ
g1 (a)
g1 (b)
R G1
150 kΩ
g2
19
BF1205
handbook, halfpage
V
I
Fig.32 Forward transfer admittance and phase as
D
DS
(b) = 12 mA.
(mS)
|
y fs
10
(b) = 5 V; V
10
d (a)
s
d (b)
1
|
2
10
V DS (a)
V DS (b)
a function of frequency; typical values;
amplifier b.
5 V
5 V
4.7 nF
4.7 nF
L1
2.2 μH
L2
2.2 μH
G2-S
= 4 V; V
MDB813
DS
R L
50 Ω
(a) = V
10
2
|
y fs
ϕ fs
G1-S
|
(a) = 0 V;
f (MHz)
Product specification
BF1205
MGX458
10
3
−10
−10
−1
(deg)
ϕ fs
2