BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 20

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
I
Fig.33 Reverse transfer admittance and phase as
D
DS
(b) = 12 mA.
|
(μS)
y rs
10
10
(b) = 5 V; V
10
|
1
3
2
10
a function of frequency; typical values;
amplifier b.
G2-S
= 4 V; V
DS
(a) = V
10
2
|
ϕ rs
y rs
G1-S
|
(a) = 0 V;
f (MHz)
MGX459
10
3
−10
−10
−10
−1
(deg)
ϕ rs
3
2
20
handbook, halfpage
V
I
Fig.34 Output admittance as a function of
D
DS
(mS)
(b) = 12 mA.
y os
10 −
10 −
(b) = 5 V; V
10
1
1
2
10
frequency; typical values; amplifier b.
G2-S
= 4 V; V
DS
(a) = V
10
2
b os
g os
G1-S
(a) = 0 V;
f (MHz)
Product specification
BF1205
MGX460
10
3