BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 5

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) I
(2) I
(3) I
(mA)
I D
Fig.3 Drain currents of MOS-FET a and b as
D
D
D
16
12
8
4
0
(b); R
(b); R
(b); R
0
G1
G1
G1
functions of V
= 120 k.
= 150 k.
= 180 k.
1
(4)
(5)
(6)
2
GG
(4) I
(5) I
(6) I
(see Fig.4).
3
D
D
D
(a); R
(a); R
(a); R
V GG (V)
G1
G1
G1
4
(1)
(2)
(3)
= 180 k.
= 150 k.
= 120 k.
MGX430
5
5
handbook, halfpage
V
V
GG
GG
= 5 V: amplifier a is OFF; amplifier b is ON.
= 0 V: amplifier a is ON; amplifier b is OFF.
g1 (a)
g1 (b)
g2
Fig.4 Functional diagram
R G1
V GG
Product specification
MGX431
d (a)
s
d (b)
BF1205