BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 5
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) I
(2) I
(3) I
(mA)
I D
Fig.3 Drain currents of MOS-FET a and b as
D
D
D
16
12
8
4
0
(b); R
(b); R
(b); R
0
G1
G1
G1
functions of V
= 120 k.
= 150 k.
= 180 k.
1
(4)
(5)
(6)
2
GG
(4) I
(5) I
(6) I
(see Fig.4).
3
D
D
D
(a); R
(a); R
(a); R
V GG (V)
G1
G1
G1
4
(1)
(2)
(3)
= 180 k.
= 150 k.
= 120 k.
MGX430
5
5
handbook, halfpage
V
V
GG
GG
= 5 V: amplifier a is OFF; amplifier b is ON.
= 0 V: amplifier a is ON; amplifier b is OFF.
g1 (a)
g1 (b)
g2
Fig.4 Functional diagram
R G1
V GG
Product specification
MGX431
d (a)
s
d (b)
BF1205