BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 8
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
V
Fig.7
DS
(mS)
y fs
(a) = 5 V; V
40
30
20
10
G2-S
G2-S
G2-S
0
0
Forward transfer admittance as a function
of drain current; typical values; amplifier a.
= 4 V.
= 3.5 V.
= 3 V.
G1-S
4
(b) = V
DS
8
(b) = 0 V; T
(4) V
(5) V
12
G2-S
G2-S
j
= 25 C.
= 2.5 V.
= 2 V.
(1)
16
(2)
I D (mA)
MGX434
(3)
(4)
(5)
20
8
handbook, halfpage
V
Fig.8
DS
I D (a)
(mA)
(a) = 5 V; V
12
8
4
0
0
Drain current as a function of internal G1
current (current in pin drain (b) if MOS-FET
(b) is switched off); typical values; amplifier a.
G2-S
= 4 V; V
10
DS
(b) = 5 V; V
20
G1-S
Product specification
30
(b) = 0 V; T
I D (b) (μA)
BF1205
MGX435
j
= 25 C.
40