MRF8S26120HSR3 Freescale Semiconductor, MRF8S26120HSR3 Datasheet

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MRF8S26120HSR3

Manufacturer Part Number
MRF8S26120HSR3
Description
FET RF N-CH 2.6GHZ 28V NI780S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8S26120HSR3

Transistor Type
N-Channel
Frequency
2.7GHz
Gain
15.6dB
Voltage - Rated
65V
Current - Test
900mA
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-780S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for W--CDMA and LTE base station applications with frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
I
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
DQ
Derate above 25°C
Case Temperature 72°C, 28 W CW, 28 Vdc, I
Case Temperature 85°C, 110 W CW
calculators by product.
Select Documentation/Application Notes -- AN1955.
= 900 mA, P
Frequency
2620 MHz
2655 MHz
2690 MHz
out
@ 1 dB Compression Point ≃ 110 Watts CW
C
out
= 25°C
= 28 Watts Avg., IQ Magnitude Clipping, Channel
(dB)
15.5
15.5
15.6
G
ps
(1,2)
Characteristic
(4)
Rating
, 28 Vdc, I
31.5
31.1
31.1
(%)
η
D
DQ
= 900 mA, 2690 MHz
DQ
Output PAR
= 900 mA, 2690 MHz
(dB)
DD
6.3
6.3
6.2
out
= 28 Volts,
)
ACPR
(dBc)
--38.0
--37.3
--36.7
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
Document Number: MRF8S26120H
C
J
CASE 465- -06, STYLE 1
CASE 465A- -06, STYLE 1
MRF8S26120HR3 MRF8S26120HSR3
2620- -2690 MHz, 28 W AVG., 28 V
MRF8S26120HSR3
MRF8S26120HR3
MRF8S26120HSR3
MRF8S26120HR3
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -780
NI- -780S
W- -CDMA, LTE
--65 to +150
Value
--0.5, +65
--6.0, +10
32, +0
Value
0.78
0.53
0.47
150
225
141
(2,3)
Rev. 0, 6/2010
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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MRF8S26120HSR3 Summary of contents

Page 1

... NI- -780 MRF8S26120HR3 CASE 465A- -06, STYLE 1 NI- -780S MRF8S26120HSR3 Symbol Value Unit V --0.5, +65 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 ° 141 W 0.78 W/°C (2,3) Symbol Value Unit R °C/W θJC 0.53 0.47 MRF8S26120HR3 MRF8S26120HSR3 1 ...

Page 2

... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 2620 MHz 2655 MHz 2690 MHz 1. Part internally matched both on input and output. MRF8S26120HR3 MRF8S26120HSR3 2 = 25°C unless otherwise noted) Symbol I DSS I ...

Page 3

... IMD sym VBW res = 28 W Avg. G out F ∆G ∆P1dB Min Typ Max = 900 mA, 2620--2690 MHz Bandwidth — 110 — — 18 — — 65 — — 0.1 — — 0.015 — — 0.007 — MRF8S26120HR3 MRF8S26120HSR3 Unit W MHz MHz dB dB/°C dB/°C 3 ...

Page 4

... V Electrolytic Capacitors C11, C12, C13, C14, C15 27 pF Chip Capacitors C16 0.8 pF Chip Capacitor R1 1 kΩ, 1/4 W Chip Resistor R2 10 kΩ, 1/4 W Chip Resistor R3 7.5 Ω, 1/4 W Chip Resistor PCB 0.030″, ε MRF8S26120HR3 MRF8S26120HSR3 C12 C13 C14 Description ...

Page 5

... Input Signal PAR = 7 0.01% Probability on CCDF OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power 32 31.8 31.6 31.4 31.2 --13 --1 --35 --1.1 --14 --36 --1.2 --37 --15 --1.3 --16 --38 --1.4 --17 --39 --1.5 --18 --40 2710 2730 100 -- --30 η D -- --45 20 PARC -- MRF8S26120HR3 MRF8S26120HSR3 5 ...

Page 6

... PAR = 7 0.01% Probability 14 on CCDF Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain 2240 MRF8S26120HR3 MRF8S26120HSR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 900 mA, Single--Carrier W--CDMA DD DQ 2690 MHz G ps 2620 MHz 2655 MHz 2690 MHz 2655 MHz 2620 MHz 2655 MHz 2620 MHz 2690 MHz OUTPUT POWER (WATTS) AVG ...

Page 7

... Clipping, Single- -Carrier Test Signal RF Device Data Freescale Semiconductor W- -CDMA TEST SIGNAL 10 0 --10 --20 --30 --40 --50 --60 --ACPR in 3.84 MHz --70 -- --90 --100 --9 --7.2 Figure 8. Single- -Carrier W- -CDMA Spectrum 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW Integrated BW --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF8S26120HR3 MRF8S26120HSR3 7 ...

Page 8

... Figure 9. Series Equivalent Source and Load Impedance MRF8S26120HR3 MRF8S26120HSR3 Vdc 900 mA Avg out source load MHz Ω Ω 2570 5.21 -- j5.62 3.17 -- j4.27 2590 5.26 -- j5.33 3.15 -- j4.20 2610 5.31 -- j5.02 3.12 -- j4.12 2630 5.35 -- j4.71 3.10 -- j4.04 2650 5.39 -- j4.39 3 ...

Page 9

... P1dB 7.87 -- j6.87 2690 P1dB 9.46 -- j5.13 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual 2620 MHz 2690 MHz 2655 MHz P3dB dBm 52.6 52.5 52.5 Z load Ω 1.44 -- j2.87 1.72 -- j3.15 1.52 -- j3.20 MRF8S26120HR3 MRF8S26120HSR3 9 ...

Page 10

... MRF8S26120HR3 MRF8S26120HSR3 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S26120HR3 MRF8S26120HSR3 11 ...

Page 12

... MRF8S26120HR3 MRF8S26120HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF8S26120HR3 MRF8S26120HSR3 13 ...

Page 14

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 June 2010 • Initial Release of Data Sheet MRF8S26120HR3 MRF8S26120HSR3 14 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S26120HR3 MRF8S26120HSR3 15 ...

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