MJ802 ON Semiconductor, MJ802 Datasheet
MJ802
Manufacturer Part Number
MJ802
Description
TRANS PWR NPN 90V 30A TO3
Manufacturer
ON Semiconductor
Datasheet
1.MJ802G.pdf
(4 pages)
Specifications of MJ802
Transistor Type
NPN
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
90V
Vce Saturation (max) @ Ib, Ic
800mV @ 750mA, 7.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 7.5A, 2V
Power - Max
200W
Frequency - Transition
2MHz
Mounting Type
Chassis Mount
Package / Case
TO-204AA, TO-3 (2 Leads + case)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MJ802OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ802
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MJ802G
Manufacturer:
ON Semiconductor
Quantity:
364
MJ802
High−Power NPN Silicon
Transistor
amplifiers to 100−Watts music power per channel.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
This transistor is for use as an output device in complementary audio
High DC Current Gain − h
Excellent Safe Operating Area
Complement to the PNP MJ4502
Pb−Free Package is Available*
Derate above 25_C
Characteristics
Rating
C
= 25_C
FE
= 25−100 @ I
Symbol
Symbol
T
V
V
J
V
V
q
P
CEO
, T
CER
I
I
CB
EB
JC
C
B
D
stg
C
= 7.5 A
−65 to +200
Value
0.875
1.14
Max
100
100
200
4.0
7.5
90
30
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
W
MJ802
MJ802G
Device
100 VOLTS − 200 WATTS
POWER TRANSISTOR
ORDERING INFORMATION
MJ802 = Device Code
G
A
YY
WW
MEX
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
30 AMPERE
TO−204AA (TO−3)
(Pb−Free)
Package
TO−204
TO−204
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
CASE 1−07
STYLE 1
MJ802G
AYYWW
MEX
Publication Order Number:
100 Units / Tray
100 Units / Tray
Shipping
MJ802/D
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MJ802 Summary of contents
Page 1
... MJ802G 1 http://onsemi.com 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS − 200 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ802G AYYWW MEX MJ802 = Device Code G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping TO− ...
Page 2
... Vdc 1.0 MHz Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î MJ802 (T = 25_C unless otherwise noted 200 mAdc) ...
Page 3
... SECONDARY BREAKDOWN LIMITED 0.5 BONDING WIRE LIMITED THERMAL LIMITATIONS T = 25°C C 0.2 PULSE DUTY CYCLE ≤ 10% 0.1 1.0 2.0 3.0 5 COLLECTOR−EMITTER VOLTAGE (VOLTS) CE Figure 4. Active Region Safe Operating Area MJ802 2.0 1 1.4 1.2 1.0 0 BE(sat) 0 0.4 0.2 ...
Page 4
... Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJ802/D ...