MCIMX286CVM4B Freescale Semiconductor, MCIMX286CVM4B Datasheet - Page 12

• Manufacturer Part Number: MCIMX286CVM4B
• Description: IC MPU I.MX286 289MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX28r

Specifications of MCIMX286CVM4B

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 454MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Program Memory Size: 128KB (32K x 32)
• Program Memory Type: Mask ROM
• Ram Size: 32K x 32
• Voltage - Supply (vcc/vdd): 1.25 V ~ 5.25 V
• Data Converters: A/D 17x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 289-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of I /o: -
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

1
2
3
Table 7
Note that HBM and CDM pass ESD testing per JEDEC spec, JESD22-A114A115.
12
EMI Digital I/O Supply
DC-DC Converter
Input Voltage on Any Digital I/O Pin Relative to Ground
Input Voltage on USB_DP and USB_DN Pins Relative to Ground
Analog I/O absolute maximum ratings (exceptions: XTALI, XTALO,
RTC_XTALI, RTC_XTALO)
Storage Temperature
VDDIO can be applied to PSWITCH through a 10 kΩ resistor. This is necessary in order to enter the chip’s firmware recovery
mode. (The on-chip circuitry prevents the actual voltage on the pin from exceeding acceptable levels.)
Application should include a Schottky diode between BATT and VDD4P2.
USB_DN and USB_DP can tolerate 5V for up to 24 hours. Note that while 5V is applied to USB_DN or USB_DP, LRADC
readings can be corrupted.
shows the electrostatic discharge immunity.
Charge Device Model (CDM)
Human Body Model (HBM)
2
289-Pin BGA Package
i.MX28 Applications Processor Data Sheet for Consumer Products, Rev. 0
Parameter
Table 6. DC Absolute Maximum Ratings (continued)
Table 7. Electrostatic Discharge Immunity
3
DCDC_BATT
V
Symbol
DDIO.EMI
—
—
—
—
Tested Level
Min.
–0.3
–0.3
–0.3
–0.3
–0.3
–40
500 V
2 kV
VDDIO+0.3
VDDIO+0.3
Freescale Semiconductor
BATT
Max.
3.63
3.63
125
Units
°
V
V
V
V
V
C