TEMD7000X01 Vishay, TEMD7000X01 Datasheet - Page 3

Photodiodes 60V 215mW 60Deg PIN Photodiode

TEMD7000X01

Manufacturer Part Number
TEMD7000X01
Description
Photodiodes 60V 215mW 60Deg PIN Photodiode
Manufacturer
Vishay
Type
PIN Photodioder
Datasheet

Specifications of TEMD7000X01

Lens Type
Transparent
Photodiode Material
Silicon
Peak Wavelength
900 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
3 uA
Maximum Dark Current
10 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
0805
Wavelength Typ
900nm
Half Angle
60°
Dark Current
1nA
Diode Case Style
0805
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Msl
MSL 3 - 168 Hours
Reverse Voltage Vr
60V
Termination Type
SMD
Collector Dark Current
10nA
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TEMD7000X01
Quantity:
70 000
Document Number: 81951
Rev. 1.3, 28-Sep-10
21535
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
94 8430
0.001
Fig. 3 - Reverse Light Current vs. Irradiance
17026
0.01
0.1
10
100
1
8
6
4
2
0
0.01
10
0.1
1
0.1
λ = 950 nm
E
V
e
V
1 mW/cm
R
- Irradiance (mW/cm
R
- Reverse Voltage (V)
0.1
- Reverse Voltage
1
1
2
f = 1 MHz
E = 0
For technical questions, contact:
10
10
λ = 950 nm
1
V
R
= 5 V
2
)
100
Silicon PIN Photodiode
100
10
detectortechsupport@vishay.com
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
94 8420
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
94 8013
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0
350
0.6
0.4
550
Vishay Semiconductors
λ - Wavelength (nm)
0.2
750
0
TEMD7000X01
10°
950
20°
www.vishay.com
1150
30°
40°
50°
60°
70°
80°
3

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