AH125-89G TriQuint, AH125-89G Datasheet - Page 4
![RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz](/photos/15/97/159726/sot89_sml.jpg)
AH125-89G
Manufacturer Part Number
AH125-89G
Description
RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz
Manufacturer
TriQuint
Type
General Purpose Amplifierr
Datasheet
1.AH125-89PCB2140.pdf
(12 pages)
Specifications of AH125-89G
Bandwidth
3600 MHz
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
3600 MHz
P1db
28 dBm
Noise Figure
4.4 dB @ 2140 MHz
Operating Supply Voltage
5 V
Supply Current
150 mA
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1070578
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AH125-89G
Manufacturer:
TriQuint
Quantity:
5 000
Company:
Part Number:
AH125-89G
Manufacturer:
TRIQUINT
Quantity:
150
Part Number:
AH125-89G
Manufacturer:
WJ
Quantity:
20 000
AH125
½W High Linearity InGaP HBT Amplifier
Frequency
Gain
Input Return Loss
Output Return Loss
ACLR
Pout=+18 dBm
Output P1dB
Output IP3
Noise Figure
Quiescent Current, Icq
Vcc
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Pout=+17dBm/tone, 1MHz spacing
Typical W-CDMA Performance at 25°C
22
21
20
19
18
22
21
20
19
18
55
50
45
40
35
840
-40
10
Freq.=920 MHz
1 MHz tone spacing
860
11
OIP3 vs. Pout/Tone over Temperature
-15
C1
Output Power per Tone (dBm)
12
869 MHz
880
-40°C
-40°C
Gain vs. Temperature
Gain vs. Frequency
Temperature (°C)
Frequency (MHz)
13
10
R1
900
C10
+27.4 +28.1 +27.9 dBm
869
+44
-52
7.9
920 MHz
20
14
10
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
14
869-960 MHz Reference Design (AH125-89PCB900)
+25°C
+25°C
920
35
C8
C4
C9
15
-52.5
+47
920
150
9.9
7.7
20
20
+5
C8
+85°C
960 MHz
940
+85°C
R2
16
60
C2
960
960
+49
9.9
-52
7.5
17
20
22
980
85
18
MHz
dBm
dBc
mA
dB
dB
dB
dB
V
-40
-45
-50
-55
-60
-65
-70
55
50
45
40
35
-10
-15
-20
-25
-5
0
14
10
840
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Notes:
1.
2.
3.
4.
5.
6.
7.
T
1 MHz tone spacing
LEAD
11
=+25°C
860
ACLR vs. Output Power over Frequency
15
OIP3 vs. Pout/Tone over Frequency
The primary RF microstrip line is 50 Ω.
Components shown on the silkscreen but not on the schematic are not used.
0
The edge of R2 is placed at 280 mil from AH125 RFout pin. (14.3
The edge of C9 is placed 35 mil from the edge of R2. (1.8
The edge of R1 is placed at 100 mil from AH125 RFin pin. (5.1
The edge of C10 is placed 130 mil from the edge of R1. (6.6
Input Return Loss vs. Frequency
Output Power per Tone (dBm)
12
Ω
869 MHz
869 MHz
880
jumpers can be replaced with copper trace in target application.
16
Output Power (dBm)
-40°C
Frequency (MHz)
13
900
920 MHz
920 MHz
17
14
+25°C
920
15
18
960 MHz
960 MHz
+85°C
940
T
16
LEAD
=+25°C
19
960
17
20
18
980
Specifications and information are subject to change without notice
-40
-45
-50
-55
-60
-65
-70
55
50
45
40
35
-10
-15
-20
-25
-5
0
14
860
840
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
1 MHz tone spacing
Pout=+17dBm per tone
ACLR vs. Output Power over Temperature
860
15
880
Output Return Loss vs. Frequency
880
-40°C
-40°C
16
Output Power (dBm)
-40°C
OIP3 vs. Frequency
o
Frequency (MHz)
Frequency (MHz)
@ 920 MHz)
900
o
900
@ 920 MHz)
+25°C
17
o
+25°C
+25°C
@ 920 MHz)
o
920
@ 920 MHz)
920
18
+85°C
+85°C
Freq.=920 MHz
Page 4 of 12 April 2010
+85°C
940
940
19
960
20
960
980