BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 16
BGA 711L7 E6327
Manufacturer Part Number
BGA 711L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet
1.BGA_711L7_E6327.pdf
(23 pages)
Specifications of BGA 711L7 E6327
Mounting Style
SMD/SMT
Operating Frequency
2100 MHz
Noise Figure
1.1 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.6 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA711L7E6327XT
2.15
V
Power Gain
Noise Figure
Data Sheet
CC
= 2.8 V,
11
10
−10
−11
−40
9
8
7
6
5
−5
−6
−7
−8
−9
−40
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature
V
|S
GS
NF
−20
21
−20
| = f (
= 0 V,
= f (
0
T
T
0
A
A
V
)
)
EN
20
T
20
A
T
= 2.8 V,
A
[°C]
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature
[°C]
40
40
60
f
= 2140 MHz,
60
80
80
100
100
BGA711L7 - Low Power Single-Band UMTS LNA
R
REF
Input Compression
16
= 27 kΩ
Supply Current
−10
−2
−4
−6
−8
0.65
0.55
0.45
0.35
−40
4
2
0
0.7
0.6
0.5
0.4
0.3
−40
−20
−20
I
CC
P1dB
0
= f (
0
= f (
T
20
T
A
A
20
)
T
[°C]
T
Electrical Characteristics
A
A
40
[°C]
)
40
60
60
V3.2, 2009-05-27
80
80
100
100