BGA 616 H6327 Infineon Technologies, BGA 616 H6327 Datasheet - Page 4
BGA 616 H6327
Manufacturer Part Number
BGA 616 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_616_H6327.pdf
(9 pages)
Specifications of BGA 616 H6327
Mounting Style
SMD/SMT
Operating Frequency
2 GHz
P1db
18 dBm
Noise Figure
2.6 dB
Operating Supply Voltage
4.5 V
Supply Current
60 mA
Maximum Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA616H6327XT
1
Feature
•
•
•
•
•
•
•
•
Applications
•
•
•
1) Pb containing package may be available upon special request
Figure 1
Description
The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 60 mA.
The BGA616 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
BGA616
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
Cascadable 50 -gain block
3 dB-bandwidth: DC to 2.7 GHz with
19.0 dB typical gain at 1.0 GHz
Compression point
Noise figure
Absolute stable
70 GHz
1 kV HBM ESD protection (Pin-to-Pin)
Pb-free (RoHS compliant) package
Driver amplifier for GSM/PCS/SCDMA/UMTS
Broadband amplifier for SAT-TV & LNBs
Broadband amplifier for CATV
f
T
Silicon Germanium Broadband MMIC Amplifier
Pin connection
- Silicon Germanium technology
F
50
= 2.60 dB at 2.0 GHz
P
-1dB
= 18 dBm at 2.0 GHz
IN, 1
Package
SOT343
1)
4
GND, 2,4
Silicon Germanium Broadband MMIC Amplifier
SOT343
Out, 3
Marking
BPs
4
3
Rev. 2.1, 2008-02-11
1
2
BGA616