BGA 616 H6327 Infineon Technologies, BGA 616 H6327 Datasheet - Page 8
BGA 616 H6327
Manufacturer Part Number
BGA 616 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_616_H6327.pdf
(9 pages)
Specifications of BGA 616 H6327
Mounting Style
SMD/SMT
Operating Frequency
2 GHz
P1db
18 dBm
Noise Figure
2.6 dB
Operating Supply Voltage
4.5 V
Supply Current
60 mA
Maximum Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA616H6327XT
Data Sheet
Device Current I
R
Noise figure F = f(f)
V
T
A
CC
Bias
= parameter in °C
3.5
2.5
1.5
0.5
= 6V, R
80
70
60
50
40
30
20
10
= parameter in
0
4
3
2
1
0
0
0
+80°C
−20°C
Bias
0.5
+25°C
= 33 , Z
2
D
Frequency [GHz]
= f(V
1
V
CC
CC
S
1.5
4
)
= 50
[V]
0
2
16
6
2.5
33
150
100
68
47
8
3
8
Device Current I
V
CC
= 6V, R
80
75
70
65
60
55
50
45
40
−40
−20
Bias
= parameter in
D
= f(T
0
T
A
A
)
20
[°C]
Measured Parameters
40
Rev. 2.1, 2008-02-11
60
30
33
36
BGA616
80