RS1D Taiwan Semiconductor, RS1D Datasheet - Page 2

• Manufacturer Part Number: RS1D
• Description: Rectifiers 1A 200V
• Manufacturer: Taiwan Semiconductor

Specifications of RS1D

• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.3 V
• Recovery Time: 150 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SMA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: F2

1.2
40
1.0
0.5
30
40
10
20
10
50
0
0
1
0
1
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
P.C.B. MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
RESISTIVE OR
INDUCTIVE LOAD
20
CURVE
SURGE CURRENT
40
RATINGS AND CHARACTERISTIC CURVES (RS1A THRU RS1M)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
NUMBER OF CYCLES AT 60Hz
60
LEAD TEMPERATURE. ( C)
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
REVERSE VOLTAGE. (V)
80
2. Rise Time=10ns max. Sourse Impedance=
10
10
1 megohm 22pf
50 ohms
NON
INDUCTIVE
DUT
100
TL=90 C
8.3ms Single Half Sine Wave
JEDEC Method
10
NONINDUCTIVE
120
O
o
OSCILLOSCOPE
(NOTE 1)
140
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
O
160
180
100
PULSE
GENERATOR
(NOTE 2)
100
(-)
(+)
+0.5A
-0.25A
-1.0A
0.001
0
0.01
0.01
0.1
0.1
30
10
30
10
1
1
0.4
0
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.5- TYPICAL INSTANTANEOUS FORWARD
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20
trr
1cm
0.6
CHARACTERISTICS PER LEG
SET TIME BASE FOR
5/ 10ns/ cm
40
0.8
FORWARD VOLTAGE. (V)
Tj=125 C
60
1.0
0
80
1.2
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
Tj=150 C
Tj=100 C
100
Tj=25 C
0
1.4
Version: B07
0
0
0
120
1.6
140
1.8