BSM50GB120DN2 Infineon Technologies, BSM50GB120DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM50GB120DN2
• Description: IGBT Modules 1200V 50A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM50GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 78 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Dual
• Dc Collector Current: 78A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Pd: 400W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Ic (max): 50.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
Cpuls
BSM 50 GB 120 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Cpuls
parameter: V
V
GE
GE
/I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
40
)
GE
)
,
= 15 V
80
T
400
= 50 A
j
= 150°C
120
600
160
800 1000 1200
600 V
200
240
280 nC 340
Q
800 V
V
V
Gate
CE
1600
6
I
Typ. capacitances
C = f (V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 50 nH
30
Oct-21-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40