BSM200GB120DN2 Infineon Technologies, BSM200GB120DN2 Datasheet - Page 5
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BSM200GB120DN2
Manufacturer Part Number
BSM200GB120DN2
Description
IGBT Modules 1200V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GB120DN2.pdf
(11 pages)
Specifications of BSM200GB120DN2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
290 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.4 KW
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge2
Module Configuration
Dual
Dc Collector Current
290A
Collector Emitter Voltage Vces
3V
Power Dissipation Pd
1.4kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +125°C
Rohs Compliant
Yes
Ic (max)
200.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON
Quantity:
45
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GB120DN2
Quantity:
50
Company:
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
726
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
20 000
BSM 200 GB 120 DN2
Typ. output characteristics
I
Typ. transfer characteristics
I
C
parameter: t
C
parameter: t
I
I
C
C
= f (V
= f (V
400
300
250
200
150
100
400
300
250
200
150
100
50
50
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
400
300
250
200
150
100
50
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
Oct-21-1997
V
V
CE
5