BSM200GB120DN2 Infineon Technologies, BSM200GB120DN2 Datasheet - Page 6
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BSM200GB120DN2
Manufacturer Part Number
BSM200GB120DN2
Description
IGBT Modules 1200V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GB120DN2.pdf
(11 pages)
Specifications of BSM200GB120DN2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
290 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.4 KW
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge2
Module Configuration
Dual
Dc Collector Current
290A
Collector Emitter Voltage Vces
3V
Power Dissipation Pd
1.4kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +125°C
Rohs Compliant
Yes
Ic (max)
200.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON
Quantity:
45
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GB120DN2
Quantity:
50
Company:
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
726
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
20 000
BSM 200 GB 120 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
I
Cpuls
parameter: V
Cpuls
V
GE
GE
/I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
200
)
GE
)
,
= 15 V
T
400
= 200 A
j
400
= 150°C
600
600
600 V
800 1000 1200
800
1000
800 V
nC
Q
V
V
Gate
CE
1400
1600
6
Typ. capacitances
C = f (V
Short circuit safe operating area
I
I
parameter: V
Csc
parameter: V
Csc
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 25 nH
30
Oct-21-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40