BSM200GB120DN2 Infineon Technologies, BSM200GB120DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM200GB120DN2
• Description: IGBT Modules 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 290 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Module Configuration: Dual
• Dc Collector Current: 290A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Pd: 1.4kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 200 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
9
Oct-21-1997