BSM75GAR120DN2 Infineon Technologies, BSM75GAR120DN2 Datasheet

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BSM75GAR120DN2

Manufacturer Part Number
BSM75GAR120DN2
Description
IGBT Transistors 1200V 100A GAR CH
Manufacturer
Infineon Technologies
Datasheets

Specifications of BSM75GAR120DN2

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
105 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Package / Case
34MM
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
105A
Collector Emitter Voltage Vces
3V
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To
Rohs Compliant
Yes
Ic (max)
75.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
34 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM75GAR120DN2
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM75GAR120DN2
Quantity:
50
BSM 75 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 75 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
V
1200V 105A
= 1 ms
CE
I
C
1
Package
HALF BRIDGE GAL 1 C67076-A2011-A70
V
V
V
I
I
P
T
T
R
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
THJCDC
Ordering Code
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
2500
F
105
210
150
625
75
20
11
0.36
0.2
0.5
Nov-24-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM75GAR120DN2 Summary of contents

Page 1

BSM 75 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 75 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate ...

Page 2

BSM 75 GAL 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM 75 GAL 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...

Page 4

BSM 75 GAL 120 DN2 Electrical Characteristics Parameter Chopper Diode Chopper diode forward voltage I = 100 100 ...

Page 5

IGBT-Module IGBT-Modules Update of Drawing Sep-21-98 Gehäusemaße / Schaltbild Package outline / Circuit diagram GAL type GAR type PIN 6 and 7 GAL type only PIN 4 and 5 GAR type only ...

Page 6

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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