BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 3
BLF369,112
Manufacturer Part Number
BLF369,112
Description
RF MOSFET Small Signal RF LDMOS 65V 100A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF369112.pdf
(17 pages)
Specifications of BLF369,112
Configuration
Dual Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Resistance Drain-source Rds (on)
0.04 Ohm (Typ) @ 14.5 V
Transistor Polarity
N-Channel
Package / Case
LDMOST
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
500W
Power Gain (typ)@vds
18@32V/19@32V/19@32VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15S
Drain Source Resistance (max)
40(Typ)@14.5Vmohm
Input Capacitance (typ)@vds
400@32VpF
Output Capacitance (typ)@vds
230@32VpF
Reverse Capacitance (typ)
15@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059725112 BLF369
NXP Semiconductors
5. Thermal characteristics
BLF369_4
Product data sheet
Fig 1.
Z
(K/W)
th(j-h)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
0.4
0.3
0.2
0.1
0
10
Transient thermal impedance from junction to heatsink as function of pulse duration
7
= 1 %
= 2 %
= 5 %
= 10 %
= 20 %
= 50 %
= 100 % (DC)
(7)
(6)
(5)
(4)
10
6
(3)
(2)
(1)
Table 5.
[1]
[2]
[3]
[4]
Symbol
R
R
Z
th(j-h)
th(j-case)
th(j-h)
T
R
R
See
j
th(j-case)
th(j-h)
is the junction temperature.
Figure
10
is dependent on the applied thermal compound and clamping/mounting of the device.
Thermal characteristics
5
and R
1.
Parameter
thermal resistance from
junction to case
thermal resistance from
junction to heatsink
transient thermal impedance
from junction to heatsink
th(j-h)
10
are measured under RF conditions.
Rev. 04 — 19 February 2009
4
10
3
10
Conditions
T
T
T
j
j
j
2
= 200 C
= 200 C
= 200 C
Multi-use VHF power LDMOS transistor
t
t
t
t
t
p
p
p
p
p
= 100 s; = 10 %
= 1 ms; = 10 %
= 2 ms; = 10 %
= 3 ms; = 10 %
= 1 ms; = 20 %
10
1
1
[1][2]
[1][2][3]
[4]
[4]
[4]
[4]
[4]
© NXP B.V. 2009. All rights reserved.
t
p
001aah494
BLF369
(s)
Typ
0.26
0.35
0.063 K/W
0.117 K/W
0.133 K/W
0.142 K/W
0.140 K/W
10
3 of 17
Unit
K/W
K/W