2N3792 Central Semiconductor, 2N3792 Datasheet
2N3792
Manufacturer Part Number
2N3792
Description
Bipolar Power PNP Power SW
Manufacturer
Central Semiconductor
Datasheet
1.2N3792.pdf
(2 pages)
Specifications of 2N3792
Continuous Collector Current
10 A
Dc Collector/base Gain Hfe Min
50
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-3
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
10 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar
process and designed for medium speed switching and amplifier applications.
MAXIMUM RATINGS (T C =25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise noted)
SYMBOL
I CEV
I CEV
I EBO
BV CEO
V CE(SAT)
V CE(SAT)
V BE(ON)
V BE(ON)
V BE(ON)
h FE
h FE
h FE
h FE
f T
TEST CONDITIONS
V CE = Rated V CEO , V EB =1.5V
V CE = Rated V CEO , V EB =1.5V, T C =150°C
V EB =7.0V
I C =200mA
I C =4.0A, I B =400mA (2N3789, 2N3790)
I C =5.0A, I B =500mA (2N3791, 2N3792)
V CE =2.0V, I C =5.0A (2N3789, 2N3790)
V CE =2.0V, I C =5.0A (2N3791, 2N3792)
V CE =4.0V, I C =10A
V CE =2.0V, I C =1.0A (2N3789, 2N3790)
V CE =2.0V, I C =1.0A (2N3791, 2N3792)
V CE =2.0V, I C =3.0A (2N3789, 2N3790)
V CE =2.0V, I C =3.0A (2N3791, 2N3792)
V CE =10V, I C =500mA, f=1.0MHz
SYMBOL
V CBO
V CEO
V EBO
I C
I B
P D
T J ,T stg
Θ JC
(SEE REVERSE SIDE)
2N3789
2N3791
60
60
MIN
4.0
60
25
50
15
30
2N3789
2N3791
-65 to +200
PNP POWER TRANSISTORS
150
7.0
10
4.0
1.17
MAX
1.0
5.0
5.0
1.0
1.0
2.0
1.8
4.0
180
90
JEDEC TO-3 CASE
2N3789
2N3790
2N3791
2N3792
2N3790
2N3792
80
80
MIN
4.0
80
25
50
15
30
2N3790
2N3792
MAX
1.0
5.0
5.0
1.0
1.0
2.0
1.8
4.0
180
90
DATA SHEET
UNITS
°C/W
UNITS
°C
MHz
V
V
V
A
A
W
mA
mA
mA
V
V
V
V
V
V
R1
Related parts for 2N3792
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Discrete Semiconductor Modules P-Ch 450mA MOSFET & 40V 500mA Schottky
Manufacturer:
Central Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules N-Ch 450mA MOSFET & 40V 500mA Schottky
Manufacturer:
Central Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules P-Ch 450mA MOSFET & 40V 500mA Schottky
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules N-Ch 450mA MOSFET & 40V 500mA Schottky
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
QUAD TRANSISTORS
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
QUAD TRANSISTORS
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
Leaded Small Signal Transistor Quad
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
QUAD TRANSISTORS
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
QUAD TRANSISTORS
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
QUAD TRANSISTORS
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
QUAD TRANSISTORS
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
Central Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
Central Semiconductor
Datasheet:
2N3792 Summary of contents
Page 1
... Rated V CEO , V EB =1.5V I CEV Rated V CEO , V EB =1.5V =150°C I EBO V EB =7.0V BV CEO I C =200mA V CE(SAT =4.0A =400mA (2N3789, 2N3790) V CE(SAT =5.0A =500mA (2N3791, 2N3792) V BE(ON =2.0V =5.0A (2N3789, 2N3790) V BE(ON =2.0V =5.0A (2N3791, 2N3792) V BE(ON =4.0V =10A =2.0V =1.0A (2N3789, 2N3790 ...
Page 2
SERIES TO-3 PACKAGE - MECHANICAL OUTLINE PNP POWER TRANSISTORS DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX SYMBOL A 1.516 1.573 38.50 39.96 B (DIA) 0.748 ...