BC846BM3T5G ON Semiconductor, BC846BM3T5G Datasheet

Bipolar Small Signal 100mA 80V NPN

BC846BM3T5G

Manufacturer Part Number
BC846BM3T5G
Description
Bipolar Small Signal 100mA 80V NPN
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC846BM3T5G

Dc Collector/base Gain Hfe Min
150 at 10 uA at 5 V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-723-3
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
265 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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BC846BM3T5G
General Purpose Transistor
NPN Silicon
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 1
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
Moisture Sensitivity Level: 1
ESD Rating:
This is a Pb−Free Device
(Note 1)
T
Derate above 25°C
Junction to Ambient (Note 1)
Alumina Substrate (Note 2)
T
Derate above 25°C
Junction to Ambient (Note 2)
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
Human Body Model: >4000 V
Machine Model: >400 V
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to
Value
+150
Max
100
265
470
640
195
6.0
2.1
5.1
65
80
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
°C
†For information on tape and reel specifications,
BC846BM3T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
1
ORDERING INFORMATION
BASE
2
1B = Specific Device Code
M
http://onsemi.com
1
= Date Code
CASE 631AA
(Pb−Free)
SOT−723
Package
SOT−723
STYLE 1
COLLECTOR
Publication Order Number:
EMITTER
3
2
8000/Tape & Reel
Shipping
MARKING
DIAGRAM
BC846BM3/D
1B M

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BC846BM3T5G Summary of contents

Page 1

... Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping BC846BM3T5G SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC846BM3/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage ( mA Collector −Base Breakdown Voltage ( mA) C Emitter −Base Breakdown Voltage ...

Page 3

I , COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain 2 1.6 1 ...

Page 4

25°C A 2.0 1.0 0.5 0.2 10 0.1 0.2 1 COLLECTOR CURRENT (mA) C Figure 7. DC Current Gain 2.0 1.6 100 1 ...

Page 5

... X *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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