VND5N07-E STMicroelectronics, VND5N07-E Datasheet - Page 18

• Manufacturer Part Number: VND5N07-E
• Description: MOSFET Power N-Ch 70V 5A OmniFET
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND5N07-E

• Minimum Operating Temperature: - 40 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 70 V
• Continuous Drain Current: 5 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 200 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 5A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package and packing information
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Package and packing information
ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DPAK mechanical data
Figure 30. DPAK package dimensions
®
packages
P 032P
VND5N07