VP0550N3-G Supertex, VP0550N3-G Datasheet

VP0550N3-G

Manufacturer Part Number

VP0550N3-G

Description

MOSFET Small Signal 500V 125Ohm

Manufacturer

Supertex

Datasheet

1.VP0550N3-G.pdf (5 pages)

Specifications of VP0550N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

60 Ohm @ 10 V

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.05 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VP0550

Device

ISS

and fast switching speeds

Package Option

VP0550N3-G

TO-92

●

P-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

+300°C

Value

±20V

DGS

DSS

-500

(V)

Product Marking

Package may or may not include the following marks: Si or

General Description

The Supertex VP0550 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

/BV

DGS

Y Y W W

0 5 5 0

●

Si VP

Tel: 408-222-8888

YY = Year Sealed

WW = Week Sealed

(max)

125

DS(ON)

(Ω)

TO-92 (N3)

SOURCE

●

= “Green” Packaging

www.supertex.com

DRAIN

GATE

VP0550

(min)

-100

(mA)

D(ON)

Related parts for VP0550N3-G

VP0550N3-G Summary of contents

Page 1

... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Option Device TO-92 VP0550 VP0550N3-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... Max Rating, -1000 0V 125 -5.0V -10V -5.0V -5mA GS D Ω 125 V = -10V -10mA -10V -10mA mmho V = -25V -10mA 0V -25V 1.0MHz -25V -100mA 25Ω GEN -0. 0V -0. GEN D.U.T. Output INPUT ● Tel: 408-222-8888 ● www.supertex.com VP0550 I DRM (mA) -250 = -25V = -25V ...

Page 3

... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics -100 -10V -80 -8V -60 -40 - (volts) DS Power Dissipation vs. Case Temperature 2.0 1 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 0 25° 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com VP0550 -6V -5V -4V -10 150 10 ...

Page 4

... Variation with Temperature (th -10V, -10mA DS(ON) 1.05 1.00 0.95 0. -1mA (th) 0.85 - 100 T (°C) j Gate Drive Dynamic Characteristics - -10V -40V -6 DS 83pF -4 30pF - 0.2 0.4 0.6 0.8 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com VP0550 -0.25 2.0 1.6 1.2 0.8 0.4 0 150 1.0 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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