NTE2970 NTE ELECTRONICS, NTE2970 Datasheet

Replacement Semiconductors TO-3P N-CH MOSFET

NTE2970

Manufacturer Part Number
NTE2970
Description
Replacement Semiconductors TO-3P N-CH MOSFET
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2970

Transistor Polarity
N Channel
Continuous Drain Current Id
22A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
290mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Lower R
Absolute Maximum Ratings:
Drain-Source Voltage, V
Drain Current, Continuous, I
Drain Current, Pulsed (Note 1), I
Gate-Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/8” from case, 5 sec.), T
Maximum Thermal Resistance, Junction-to-Case, R
Typical Thermal Resistance, Case-to-Sink, R
Maximum Thermal Resistance, Junction-to-Ambient, R
Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature.
Note 2. L = 8mH, I
Note 3. I
T
T
Linear Derating Factor
C
C
SD
= +25°C
= +100°C
DS(ON)
≤ 22A, di/dt ≤ 300A/μs, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 22A, V
GS
DSS
N-Channel, Enhancement Mode
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
DD
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50V, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
D
AR
≤ V
J
NTE2970
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
AS
= 27Ω, Starting T
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications:
D SMPS
D DC-DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
, Starting T
thJC
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
J
J
L
= +25°C.
= +25°C.
. . . . . . . . . . . . . . . . . . . . . .
-55° to +150°C
-55° to +150°C
2.22W/°C
0.45°C/W
0.24°C/W
2151mJ
40°C/W
3.5V/ns
+300°C
27.8mJ
13.4A
278W
500V
±30V
22A
88A
22A

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NTE2970 Summary of contents

Page 1

... Typical Thermal Resistance, Case-to-Sink, R Maximum Thermal Resistance, Junction-to-Ambient, R Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature. Note 8mH 22A ≤ 22A, di/dt ≤ 300A/μs, V Note NTE2970 MOSFET High Speed Switch Applications: D SMPS D DC-DC Converter D Battery Charger D Power Supply of Printer D Copier ...

Page 2

Electrical Characteristics: (T Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Static Drain-Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off ...

Page 3

D .591 .787 .215 (5.47) .126 (3.22) Dia ...

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