Description:
The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
switchmode applications.
Features:
D Fast Turn–On Times @ T
D 100 C Performance Specified for:
Applications:
D Switching Regulators
D Inverters
D Solenoids
D Relay Drivers
D Motor Controls
D Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Device Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Test: Pulse Width
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current
B
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage, High Speed Power Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +100 C:
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5 s, Duty Cycle
J
thJC
NTE2319
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . . . . . . . . . . . . .
–65 to +200 C
–65 to +200 C
+275 C
1W/ C
1 C/W
175W
100W
450V
850V
15A
20A
10A
15A
6V