NTE454 NTE ELECTRONICS, NTE454 Datasheet
NTE454
Manufacturer Part Number
NTE454
Description
Replacement Semiconductors TO-72 DUAL GT MOSFET
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE454.pdf
(3 pages)
Specifications of NTE454
Drain Source Voltage Vds
20V
Continuous Drain Current Id
60mA
Power Dissipation Pd
360mW
Operating Temperature Range
-65°C To +175°C
No. Of Pins
4
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer
applications.
Features:
D Low Reverse Transfer Capacitance – C
D High Forward Transfer Admittance – |y
D Diode Protected Gates
Absolute Maximum Ratings:
Drain Source Voltage, V
Drain–Gate Voltage, V
Gate Current, I
Drain Current–Continuous, I
Total Power Dissipation (T
Total Power Dissipation (T
Storage Channel Temperature Range, T
Junction Temperature Range, T
Lead Temperature, 1/16” from Seated Surface for 10 Seconds, T
Derate above 25 C
Derate above 25 C
I
G1
G2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
DG1
DG2
DSX
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
D
= +25 C), P
TV UHF/RF Amp, Gate Protected
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
MOSFET, N–Ch, Dual Gate,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fe
rss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE454
| = 0–20 mmhos
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0.03pf (Max)
L
. . . . . . . . . . . . . . . . . . . . . .
Gate 2
2
Gate 1
3
–65 to +200 C
–65 to +175 C
Source
2.4mW/ C
8.0mW/ C
10mAdc
10mAdc
60mAdc
4
360mW
1.2Watt
20Vdc
30Vdc
30Vdc
300 C
Drain
1
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NTE454 Summary of contents
Page 1
... Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – High Forward Transfer Admittance – Diode Protected Gates Absolute Maximum Ratings: Drain Source Voltage, V DSX Drain–Gate Voltage, V ...
Page 2
Electrical Characteristics: (T Characteristics OFF CHARACTERISTICS Drain–Source Breakdown Voltage Gate 1= Source Breakdown Voltage (Note 1) Gate 2–Source Breakdown Voltage (Note 1) Gate 1 to Source Cutoff Voltage Gate 2 to Source Cutoff Voltage Gate 1 Leakage Current Gate 2 ...
Page 3
Min .018 (0.45) Dia Drain 45 .040 (1.02) .220 (5.58) Dia .185 (4.7) Dia .030 (.762) Gate 2 Gate 1 Source/Case ...