NTE287 NTE ELECTRONICS, NTE287 Datasheet
NTE287
Manufacturer Part Number
NTE287
Description
Replacement Semiconductors TO-92 NPN HIV GP AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE287.pdf
(2 pages)
Specifications of NTE287
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
300V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
625mW
Dc Collector Current
500mA
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation @ T
Total Device Dissipation @ T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
NTE288
NTE288
NTE288
NTE287
NTE287
NTE287
NTE287
NTE288
Derate Above +25 C
Derate Above +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage, General Purpose Amplifier
Silicon Complementary Transistors
EBO
CBE
NTE287 (NPN) & NTE288 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
= +25 C, P
= +25 C, P
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CBO
EBO
D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
I
I
I
V
V
V
C
C
E
CB
EB
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100 A, I
= 1mA, I
= 100 A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200V, I
= 6V, I
= 3V, I
Test Conditions
C
C
B
2%.
= 0
= 0
= 0, Note 1
C
E
E
= 0
= 0
= 0
Min
300
300
6
5
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
83.3 C/mW
Max Unit
0.25
0.1
0.1
0.1
200 C/mW
–
–
–
–
12mW/ C
5mW/ C
625mW
500mA
300V
300V
1.5W
V
V
V
V
A
A
A
A
6V
5V
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NTE287 Summary of contents
Page 1
... NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Base Voltage, V CBE Emitter–Base Voltage, V EBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain NTE287 & NTE288 NTE287 NTE288 Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain – Bandwidth Product Collector–Base Capacitance NTE287 NTE288 Note 1. Pulse Test: Pulse Width ...