NTE159 NTE ELECTRONICS, NTE159 Datasheet

Replacement Semiconductors PNP -80V -1A BULK

NTE159

Manufacturer Part Number
NTE159
Description
Replacement Semiconductors PNP -80V -1A BULK
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE159

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
625mW
Dc Collector Current
-800mA
Dc Current Gain Hfe
250
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Derate Above 25°C
plementary pairs have their gain specification (h
Parameter
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= 25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Amplifier, Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
Silicon PNP Transistor
(Compl to NTE123AP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
h
CBO
EBO
FE
D
θJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
I
I
I
V
V
V
V
V
V
V
I
I
I
I
NTE159
C
C
E
C
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
θJA
CB
CB
CE
CE
CE
CE
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10mA, I
= 10μA, I
= 10μA, I
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 50V, I
= 50V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
E
B
E
E
C
C
C
C
C
= 0
= 0
B
B
B
B
= 0, Note 2
= 0
= 0, T
= 100μA
= 1mA
= 10mA
= 100mA
= 500mA
= 15mA
= 50mA
= 15mA
= 50mA
FE
) matched to within 10% of each other.
A
= +75°C
Min
80
80
25
40
50
40
30
5
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55° to +150°C
-55° to +150°C
Max
0.15
100
250
0.5
0.9
1.1
50
-
-
-
5
-
-
-
-
83.3°C/W
200°C/W
5mW/°C
625mW
800mA
Unit
nA
μA
nA
V
V
V
V
V
V
V
80V
80V
5V

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NTE159 Summary of contents

Page 1

... Operating Junction Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction to Case, R Thermal Resistance, Junction to Ambient, R Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐ plementary pairs have their gain specification (h Electrical Characteristics: (T Parameter OFF Characteristics ...

Page 2

Parameter Dynamic Characteristics Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure Switching Characteristics Turn-On Time Turn-Off Time .105 (2.67) Max .205 (5.2) Max A Symbol Test Conditions 20V 1MHz ob CB ...

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