NTE2383 NTE ELECTRONICS, NTE2383 Datasheet
NTE2383
Manufacturer Part Number
NTE2383
Description
Replacement Semiconductors TO-220 P-CH MOSFET
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2383.pdf
(3 pages)
Specifications of NTE2383
Transistor Polarity
P Channel
Continuous Drain Current Id
10.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
300mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Description:
The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage,
high speed power switching applications such as switching regulators, converters, solenoid, and relay
drivers.
Features:
D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Rugged Polysilicon Gate Cell Structure
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximim Ratings:
Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Drain Current, Pulsed (Note 3), I
Gate Current, Pulsed, I
Single Pulsed Avalanvhe Energy (Note 4), E
Avalanche Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Case–to–Sink (Note 5), R
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. T
Note 2. Pulse Test: Pulse Width
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 8.5mH, V
Note 5. Mounting surface flat, smooth, and greased.
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
J
= +25 to +150 C
DS(ON)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
DD
GS
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
= 25V, R
= 1M , Note 1), V
P–Channel Enhancement Mode,
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
DM
DSS
G
(Compl to NTE2382)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
300 s, Duty Cycle
= 25 , Starting T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
opr
thJC
NTE2383
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DGR
AS
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C.
2%.
L
. . . . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
62.5 C/W
1.67 C/W
0.6W/ C
0.5 C/W
+300 C
510mJ
10.5A
10.5A
100V
100V
7.5A
1.5A
75W
20V
42A
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NTE2383 Summary of contents
Page 1
... P–Channel Enhancement Mode, Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower R DS(ON) D Improved Inductive Ruggedness D Fast Switching Times ...
Page 2
Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse Gate Threshold Voltage Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...