NTE2302 NTE ELECTRONICS, NTE2302 Datasheet
NTE2302
Manufacturer Part Number
NTE2302
Description
Replacement Semiconductors TO-3P NPN BIPO HORZ
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2302.pdf
(2 pages)
Specifications of NTE2302
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
120W
Dc Collector Current
5A
Dc Current Gain Hfe
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
D Capable of Being Mounted in a Variety of Methods
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Diode Forward Voltage
Fall Time
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Color TV Horizontal Deflection Output
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
Silicon NPN Transistor
V
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
C
f
FE
t
T
f
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2302
V
V
V
V
I
I
I
I
I
I
V
I
C
C
C
C
E
EC
B2
CB
EB
CE
CE
CC
= 4A, I
= 4A, I
= 5mA, I
= 100mA, R
= 200mA, I
= –1.6A, R
= 5A
= 800V, I
= 4V, I
= 5V, I
= 10V, I
= 200V, I
Test Conditions
B
B
C
C
= 0.8A
= 0.8A
E
C
= 0
= 0
= 1A
C
E
C
= 1A
L
BE
= 0
= 0
= 4A, I
= 50
=
B1
w
/Damper Diode
= 0.8A,
1500
Min
800
40
–
8
–
–
–
7
–
–
Typ
–
–
–
3
–
–
–
–
–
–
–
–55 to +150 C
Max
130
5.0
1.5
0.7
10
–
–
–
–
–
2
+150 C
1500V
120W
Unit
MHz
800V
mA
V
V
V
V
V
V
16A
A
s
7V
5A
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NTE2302 Summary of contents
Page 1
... Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Diode Forward Voltage Fall Time NTE2302 Silicon NPN Transistor = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
C .591 (15.02) .787 (20. .126 (3.22) Dia E .215 (5.47) ...