NTE262 NTE ELECTRONICS, NTE262 Datasheet
NTE262
Manufacturer Part Number
NTE262
Description
Replacement Semiconductors TO-220 PNP DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE262.pdf
(2 pages)
Specifications of NTE262
C-e Breakdown Voltage
100V
Number Of Cross References
293
Terminal Type
5
Current Rating
5A
Voltage Rating
100V
Dc Current Gain Min (hfe)
4
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Unclamped Inductive Load Energy (Note 1), E
Operating Junction Temperature range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. I
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
C
V
= 1A, L = 100mH, P.R.F. = 10Hz, V
CE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2V Max @ I
= 4V Max @ I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
A
CB
C
NTE261 (NPN) & NTE262 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
= 2500 Typ @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3A
= 5A
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
thJA
CC
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4A
= 20V, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V Min @ 100mA
BE
= 100 .
–65 to +150 C
–65 to +150 C
0.016W/ C
0.52W/ C
1.92 C/W
62.5 C/W
120mA
50mJ
100V
100V
65W
2W
5V
5A
8A
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NTE262 Summary of contents
Page 1
... NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain Collector–Emitter Sustaining Voltage Low Collector– ...
Page 2
... Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Output Capacitance NTE261 NTE262 Note 2. Pulse Test: Pulse Width NTE261 B NTE262 B = +25 C unless otherwise specified) C Symbol Test Conditions 100mA, I CEO(sus ...