NTE2396 NTE ELECTRONICS, NTE2396 Datasheet

Replacement Semiconductors N-CH PWR MOS TO-220

NTE2396

Manufacturer Part Number

NTE2396

Description

Replacement Semiconductors N-CH PWR MOS TO-220

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2396.pdf (3 pages)

Specifications of NTE2396

Rohs Compliant

YES

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 3
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Features:

D Dynamic dv/dt Rating

D Repetitive Avalanche Rated

D Current Sense

D +175 C Operating Temperature

D Fast Switching

D Ease of Paralleling

D Simple Drive Requirements

Absolute Maximum Ratings:

Continuous Drain Current (V

Pulsed Drain Current (Note 1), I

Power Dissipation (T

Gate–to–Source Voltage, V

Single Pulse Avalanche Energy (Note 2), E

Avalanche Current (Note 1), I

Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt

Operating Junction Temperature Range, T

Storage Temperature Range, T

Lead Temperature (During Soldering, 1.6mm from case for 10sec), T

Mounting Torque (6–32 or M3 Screw)

Thermal Resistance, Junction–to–Case, R

Thermal Resistance, Junction–to–Ambient, R

Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.

Note 2. V

Note 3. I

Derate Linearly Above 25 C

= +25 C

= +100 C

= 25V, starting T

28A, di/dt

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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= +25 C), P

170A/ s, V

N–Ch, Enhancement Mode

stg

= +25 C, L = 191 H, R

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 10V), I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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High Speed Switch

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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thJC

NTE2396

MOSFET

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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(BR)DSS

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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, T

= 25 , I

+175 C

= 28A

thCS

. . . . . . . . . . . . . . . . .

. . . . . . . . . . . .

10 lbfin (1.1Nm)

–55 to +175 C

1.0W/ C

1.0 C/W

0.5 C/W

62 C/W

5.5V/ns

+300 C

100mJ

150W

15mJ

110A

28A

20A

20V

28A

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NTE2396 Summary of contents

Page 1

... Thermal Resistance, Junction–to–Ambient, R Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 25V, starting T DD Note 3. I 28A, di/dt 170A NTE2396 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...

Page 2

Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...

Page 3

Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...

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