NTE2399 NTE ELECTRONICS, NTE2399 Datasheet

Replacement Semiconductors TO-220 N-CH 1000V

NTE2399

Manufacturer Part Number

NTE2399

Description

Replacement Semiconductors TO-220 N-CH 1000V

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2399.pdf (3 pages)

Specifications of NTE2399

Transistor Polarity

N Channel

Continuous Drain Current Id

3.1A

Drain Source Voltage Vds

1kV

On Resistance Rds(on)

500mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Current page: 1 of 3
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Features:

D Dynamic dv/dt Rating

D Repetitive Avalanche Rated

D Fast Switching

D Ease of Paralleling

D Simple Drive Requirements

Absolute Maximum Ratings:

Continuous Drain Current (V

Pulsed Drain Current (Note 1), I

Power Dissipation (T

Gate–to–Source Voltage, V

Single Pulse Avalanche Energy (Note 2), E

Avalanche Current (Note 1), I

Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt

Operating Junction Temperature Range, T

Storage Temperature Range, T

Lead Temperature (During Soldering, 1.6mm from case for 10sec), T

Mounting Torque (6–32 or M3 Screw)

Thermal Resistance, Junction–to–Case, R

Thermal Resistance, Junction–to–Ambient, R

Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.

Note 2. V

Note 3. I

Note 4. Pules Width

Derate Linearly Above 25 C

= +25 C

= +100 C

= 50V, starting T

3.1A, di/dt

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25 C), P

300 s, Duty Cycle

80A/ s, V

N–Ch, Enhancement Mode

stg

= +25 C, L = 55mH, R

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 10V), I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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High Speed Switch

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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600V, T

thJC

NTE2399

MOSFET

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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2%.

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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+150 C

= 25 , I

= 3.1A

thCS

. . . . . . . . . . . . . . . . .

. . . . . . . . . . . .

10 lbfin (1.1Nm)

–55 to +150 C

1.0W/ C

1.0 C/W

0.5 C/W

62 C/W

1.0V/ns

+300 C

280mJ

125W

13mJ

3.1A

2.0A

3.1A

12A

Related parts for NTE2399

NTE2399 Summary of contents

Page 1

... Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 50V, starting T DD Note 3. I 3.1A, di/dt 80A Note 4. Pules Width 300 s, Duty Cycle NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...

Page 2

Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...

Page 3

Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...

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