NTE390 NTE ELECTRONICS, NTE390 Datasheet
NTE390
Manufacturer Part Number
NTE390
Description
Replacement Semiconductors TO-218 NPN PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE390.pdf
(2 pages)
Specifications of NTE390
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
80W
Dc Collector Current
10A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 10A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: h
D High Current Gain Bandwidth Product: h
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle
Continuous
Peak (Note 1)
Derate Above 25 C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
FE
CB
C
NTE390 (NPN) & NTE391 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
= 40 Typ @ 3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= 0.7mA @ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fe
thJA
CE
= 3 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
C
= 500mA, f = 1MHz
–65 to +150 C
–65 to +150 C
0.64W/ C
1.56 C/W
35.7 C/W
100V
100V
80W
10A
15A
5V
3A
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NTE390 Summary of contents
Page 1
... NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 10A Collector Current D Low Leakage Current Excellent DC Gain: h ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage V Collector–Emitter Cutoff Current Emitter–Base Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Current–Gain Bandwidth Product Note 2. Pulse ...