NTE2353 NTE ELECTRONICS, NTE2353 Datasheet
NTE2353
Manufacturer Part Number
NTE2353
Description
Replacement Semiconductors TO-220 NPN TV HORZ
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2353.pdf
(2 pages)
Specifications of NTE2353
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Power Dissipation Pd
70W
Dc Collector Current
10A
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D High Speed: t
D High Breakdown Voltage: V
D On–Chip Damper Diode
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
FallTime
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
= 100nsec
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
= +25 C), P
CBO
TV Horizontal Deflection Output
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
V
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
= 1500V
I
CE(sat)
BE(sat)
h
h
= +25 C unless otherwise specified)
I
I
CBO
EBO
CES
V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE1
FE2
w
t
f
F
/Damper Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2353
V
V
I
V
I
I
V
V
I
I
C
C
C
EC
C
CE
CB
EB
CE
CE
= 100mA, I
= 8A, I
= 8A, I
= 6A, I
= 10A
= 4V
= 1500V
= 800V
= 5V, I
= 5V, I
Test Conditions
B
B
B1
= 1.6A
= 1.6A
C
C
= 1.2A, I
= 1A
= 8A
B
= 0
B2
= 2.4A
Min
800
40
–
–
–
–
8
5
–
–
Typ
0.1
–
–
–
–
–
–
–
–
–
–55 to +150 C
Max Unit
130
1.0
1.5
2.0
0.3
10
10
–
5
–
+150 C
1500V
800V
mA
mA
70W
V
V
V
V
10A
30A
A
s
6V
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NTE2353 Summary of contents
Page 1
... Storage Temperature Range, T Electrical Characteristics: (T Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain Diode Forward Voltage FallTime NTE2353 Silicon NPN Transistor w /Damper Diode = 1500V CBO = +25 C unless otherwise specified CEO ...
Page 2
Dia .630 (16.0) .866 (22. .158 (4.0) .215 (5.45) E .040 (1.0) ...