NTE2355 NTE ELECTRONICS, NTE2355 Datasheet
NTE2355
Manufacturer Part Number
NTE2355
Description
Replacement Semiconductors TO-92 NPN DIG TRANS
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2356.pdf
(2 pages)
Specifications of NTE2355
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Built–In Bias Resistor (R
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (T
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
Output Capacitance
NTE2356
NTE2356
NTE2355
NTE2355
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital
C
Silicon Complementary Transistors
NTE2355 (NPN) & NTE2356 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
1
CBO
= 10k , R
CEO
A
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
/2 Built–In 10k Bias Resistors
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
I
I
I
C
CBO
CEO
h
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
2
= 10k )
V
V
V
V
V
V
CB
CE
EB
CE
CE
CB
= 5V, I
= 40V, I
= 40V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
C
C
E
B
C
= 0
= 10mA
= 0
= 0
= 5mA
Min
170
50
–
–
–
–
–
–
Typ
250
250
200
3.7
5.5
–
–
–
–55 to +160 C
Max
330
0.1
0.5
–
–
–
–
–
300mW
+150 C
100mA
200mA
MHz
MHz
Unit
pF
pF
50V
50V
10V
A
A
A
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NTE2355 Summary of contents
Page 1
... NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital Features: D Built–In Bias Resistor (R D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (T Collector to Base Voltage, V Collector to Emitter Voltage, V Emitter to Base Voltage, V EBO Collector Current, I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Collector–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Collector (Output Base (Input Emitter (GND) NPN = +25 C unless ...