NTE323 NTE ELECTRONICS, NTE323 Datasheet
NTE323
Manufacturer Part Number
NTE323
Description
Replacement Semiconductors TO-39 PNP GP AMP/SW
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE323.pdf
(2 pages)
Specifications of NTE323
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-120V
Transition Frequency Typ Ft
30MHz
Power Dissipation Pd
150W
Dc Collector Current
16A
Dc Current Gain Hfe
140
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage, V
Emitter–Base Voltage (I
Collector Current, I
Base Current, I
Total Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Duration = 300 s, Duty Cycle
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage
T
T
A
C
= +25 C
= +25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
E
= 0), V
tot
NTE323 (PNP) & NTE324 (NPN)
= 0), V
CEO
stg
C
Symbol
EBO
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
CE(sat)
I
I
I
I
CBO
CBO
CEO
CEV
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
I
I
I
I
C
C
C
C
CE
CB
CE
CE
EB
thJC
= 10mA, I
= 250mA, I
= 500mA, I
= 1A, I
= 120V, V
= 4V, I
= 120V, I
= 80V, I
= 120V, V
thJA
2%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 200mA, Note 1
B
B
= 0
E
B
B
BE
= 0
= 0, Note 1
BE
= 0
= 25mA, Note 1
= 50mA, Note 1
= –1.5V, T
= –1.5V
C
= +150 C
Min
120
–
–
–
–
–
–
–
–
Typ Max Unit
–
–
–
–
–
–
–
–
–
–65 to +200 C
0.6
1.0
2.0
10
1
1
1
1
–
17.4 C/W
175 C/W
+200 C
500mA
120V
120V
mA
10W
V
V
V
V
A
A
A
A
1W
4V
1A
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NTE323 Summary of contents
Page 1
... NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Voltage DC Current Gain Transition Frequency Collector–Base Capacitance Small–Signal Current Gain Note 1. Pulse Duration = 300 s, Duty Cycle Emitter = +25 C unless otherwise specified) C Symbol Test Conditions ...