NTE396 NTE ELECTRONICS, NTE396 Datasheet
NTE396
Manufacturer Part Number
NTE396
Description
Replacement Semiconductors TO-39 NPN PWR AMP SW
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE396.pdf
(2 pages)
Specifications of NTE396
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
350V
Transition Frequency Typ Ft
15MHz
Power Dissipation Pd
1W
Dc Collector Current
1A
Dc Current Gain Hfe
60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Test; Pulse Width
CAUTION: The sustaining voltage must not be measured on a curve tracer.
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Derate Above 25 C
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Amplifier & High Speed Switch
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
(Compl to NTE397)
CEO(sus)
300 s, Duty Cycle
I
I
I
CE(sat)
BE(sat)
I
h
CEO
CBO
CEX
EBO
FE
D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE396
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
I
I
I
I
C
C
C
C
C
thJA
CE
CE
CB
EB
= 50mA, I
= 2mA, V
= 20mA, V
= 50mA, I
= 50mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 6V, I
= 300V, I
= 450V, V
= 360V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
CE
B
B
B
= 0
CE
2%.
B
E
= 0, Note 1
= 4mA
= 4mA
BE
= 10V
= 0
= 0
= 10V
= 1.5V
Min Typ Max Unit
350
30
40
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
–
–
–
–
–
–
–
–
–
28.6mW/ C
500
160
0.5
1.3
5.7mW/ C
20
20
20
–
–
175 C/W
35 C/W
500mA
350V
450V
V
V
V
1W
5W
A
A
A
A
7V
1A
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NTE396 Summary of contents
Page 1
... DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Note 1. Pulse Test; Pulse Width CAUTION: The sustaining voltage must not be measured on a curve tracer. NTE396 Silicon NPN Transistor (Compl to NTE397 CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Small–Signal Current Gain Real Part of Input Impedance Emitter = +25 C unless otherwise specified) A Symbol Test Conditions 10mA ...