NTE254 NTE ELECTRONICS, NTE254 Datasheet

Replacement Semiconductors TO-126 PNP DAR PWR

NTE254

Manufacturer Part Number
NTE254
Description
Replacement Semiconductors TO-126 PNP DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE254

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-80V
Power Dissipation Pd
150W
Dc Collector Current
16A
Dc Current Gain Hfe
2000
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTE2544
Manufacturer:
TI
Quantity:
101
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: h
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE253 (NPN) & NTE254 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
A
= 2000 (Typ) @ I
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
(BR)CEO
A
I
I
I
CEO
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
D
I
V
V
V
V
C
J
thJC
CE
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 80V, I
= 80V, I
= 80V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
= 2A
C
B
B
E
E
= 0
= 0, Note 1
= 0
= 0
= 0, T
C
= +100 C
Min
80
Typ
–65 to +150 C
–65 to +150 C
Max
100
100
500
2.0
0.32W/ C
3.23 C/W
100mA
Unit
mA
V
40W
A
A
A
80V
80V
5V
4A

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NTE254 Summary of contents

Page 1

... NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D High DC Current Gain Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (T Collector– ...

Page 2

... ON Characteristics (Note 1) DC Current Gain NTE253 NTE254 NTE253 & NTE253 Collector–Emitter Saturation Voltage NTE253 NTE254 NTE253 & NTE254 Base–Emitter ON Voltage NTE253 NTE254 NTE253 & NTE254 Dynamic Characteristics Small–Signal Current Gain Note 1. Pulse Test: Pulse Width Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP) ...

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