NTE112 NTE ELECTRONICS, NTE112 Datasheet
NTE112
Manufacturer Part Number
NTE112
Description
Replacement Semiconductors DO-35 30MA SCHOTKEY
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE112.pdf
(2 pages)
Specifications of NTE112
Repetitive Reverse Voltage Vrrm Max
5V
Forward Current If(av)
30mA
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
60mA
Diode Case Style
DO-35
No. Of Pins
2
Diode Type
Schottky
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V
Forward Continuous Current (T
Surge Non-Repetitive Forward Current (t
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Ambient (Note 1), R
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), T
Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle < 2%.
Note 3. Measured on a B-line Electronics QS-3 stored charge meter.
Note 4. Noise Figure Test: -
Static Characteristics
Breakdown Voltage
Forward Voltage Drop
Reverse Current
Dynamic Characteristics
Capacitance
Stored Charge
Frequency
Parameter
Silicon Small Signal Schottky Diode
stg
A
A
Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.
= +25°C, Note 1), I
= +25°C unless otherwise specified)
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
V
RRM
Q
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)
I
C
F
R
F
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
≤ 1s, Note 1), I
I
I
V
V
I
f = 1GHz, Note 4
NTE112
R
F
F
R
R
= 10mA, Note 2
= 10mA, Note 3
= 100μA
= 1V, Note 2
= 0V, f = 1MHz
Test Conditions
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
th (j- a)
FSM
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
Min
5
-
-
-
-
-
L
. . . . . . . . . .
Typ
-
-
-
-
-
6
-65 ° to +150°C
Max Unit
0.55
0.05
-
1
3
7
400°C/W
+125°C
+230°C
30mA
60mA
μA
pC
dB
pF
V
V
5V
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NTE112 Summary of contents
Page 1
... Silicon Small Signal Schottky Diode Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, V Forward Continuous Current (T Surge Non-Repetitive Forward Current (t Operating Junction Temperature, T ...
Page 2
Min .022 (.509) Dia Max Color Band Denotes Cathode .200 (5.08) Max .090 (2.28) Dia Max ...