NTE490 NTE ELECTRONICS, NTE490 Datasheet

Replacement Semiconductors TO-92 N-CH 60V 0.5A

NTE490

Manufacturer Part Number
NTE490
Description
Replacement Semiconductors TO-92 N-CH 60V 0.5A
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE490

Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings:
Drain–Source Voltage, V
Gate–Source Voltage, V
Drain Current (Note 1), I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
OFF Characteristics
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics (Note 2)
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain Cutoff Current
Forward Transconductance
Small–Signal Characteristics
Input Capacitance
Switching Characteristics
Turn–On Time
Turn–Off Time
Parameter
GS
D
DS
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
N–Ch, Enhancement Mode
stg
A
= +25 C unless otherwise specified)
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
r
High Speed Switch
300 s, Duty Cycle
(BR)DSS
DS
I
I
GS(Th)
D(off)
C
GSS
g
t
t
on
off
(on)
iss
fs
D
J
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
V
V
I
I
NTE490
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
GS
DS
GS
DS
DS
DS
= 200mA
= 200mA
= V
= 25V, V
= 10V, I
= 10V, V
= 0, I
= 15V, V
= 10V, I
GS
Test Conditions
D
, I
= 100 A
D
D
D
GS
GS
DS
= 250mA
= 200mA
= 1mA
2%.
= 0
= 0
= 0, f = 1MHz
Min
0.8
60
0.01
Typ
200
2.0
1.8
90
4
4
–55 to +150 C
–55 to +150 C
Max
3.0
5.0
0.5
10
60
10
10
350mW
500mA
mmhos
Unit
nA
pF
ns
ns
V
V
A
60V
20V

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NTE490 Summary of contents

Page 1

... Switching Characteristics Turn–On Time Turn–Off Time Note 2. Pulse Test: Pulse Width NTE490 MOSFET N–Ch, Enhancement Mode High Speed Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...

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